Designing silicon carbide NMOS integrated circuits for wide temperature operation

Cheng-Po Chen, Reza Ghandi. Designing silicon carbide NMOS integrated circuits for wide temperature operation. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015. pages 109-112, IEEE, 2015. [doi]

@inproceedings{ChenG15-15,
  title = {Designing silicon carbide NMOS integrated circuits for wide temperature operation},
  author = {Cheng-Po Chen and Reza Ghandi},
  year = {2015},
  doi = {10.1109/ISCAS.2015.7168582},
  url = {http://dx.doi.org/10.1109/ISCAS.2015.7168582},
  researchr = {https://researchr.org/publication/ChenG15-15},
  cites = {0},
  citedby = {0},
  pages = {109-112},
  booktitle = {2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015},
  publisher = {IEEE},
  isbn = {978-1-4799-8391-9},
}