Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors

Jiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han. Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 127-130, IEEE, 2023. [doi]

@inproceedings{ChenGGJLYH23,
  title = {Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors},
  author = {Jiajia Chen and Jiani Gu and Zhi Gong and Chengji Jin and Huan Liu and Xiao Yu and Genquan Han},
  year = {2023},
  doi = {10.1109/ICICDT59917.2023.10332375},
  url = {https://doi.org/10.1109/ICICDT59917.2023.10332375},
  researchr = {https://researchr.org/publication/ChenGGJLYH23},
  cites = {0},
  citedby = {0},
  pages = {127-130},
  booktitle = {International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-1931-6},
}