Table of Contents

• Enabling Quantum Imaging applications with CMOS SPAD arraysLeonardo Gasperini. [doi]
• Efficient integrated devices are growing on Engineered SubstratesChristophe Maleville. [doi]
• Silicon Technologies for Quantum ComputingTakahiro Mori. [doi]
• Design and process issues for high yield and reliability in thin BOX FD-SOIYoshiki Yamamoto. [doi]
• Energy-Efficient SRAM with Emerging TechnologiesVita Pi-Ho Hu. [doi]
• Terahertz Resonant-Tunneling DiodesSafumi Suzuki. [doi]
• Physical reservoir computing toward edge AI hardwareRyosho Nakane. [doi]
• Nanoscale Air Channel Devices for Emerging IC ApplicationsJinshun Bi. [doi]
• Challenges in generating true random numbers considering the variety of corners, aging, and attacksSylvain Guilley. [doi]
• Analog Computation-in-Memory (CiM) for AI ApplicationsKen Takeuchi. [doi]
• Towards Ultra-fast Time-based Electrochemical Impedance Spectroscopy of SensorsAntonio Radogna. [doi]
• Millimeter-Wave Dual-Frequency Transformer-based RectifierYun Fang. [doi]
• Artificial Synapses Enabled Neuromorphic Computing: From Blueprints to RealityChun Zhao. [doi]
• Dominant Role of Air Ambient in Dynamic Bending Degradation of Flexible LTPS TFTsMingxiang Wang. [doi]
• Empowering CMOS-VLSI by MEMS Technology - An Example of High-Voltage Photovoltaic Chiplet Integration for Autonomous Micro Robotic SystemsYoshio Mita. [doi]
• Necessary but non-core laboratory analytical works drives semiconductor industry into a new norm: Labless solutionXiaomin Li. [doi]
• Reservoir computing utilizing ferroelectric-gate-insulator FETs and capacitorsShinichi Takagi. [doi]
• Disturb-Free Operation Scheme and Application for Multilevel Cell Ferroelectric FETs NAND ArrayXiao Yu. [doi]
• Semiconductor Packaging Revolution in the Era of ChipletsYasumitsu Orii. [doi]
• On-chip transmission lines for silicon CMOS 6G: From basics to open questionsShuhei Amakawa. [doi]
• Ferro-Electronics: From Memory to ComputingKai Ni. [doi]
• Wurtzite-Structured Ferroelectric Materials Growth and Film PropertiesYi Tong. [doi]
• RISC-V Is InevitableSam Rogan, Yoshihito Kondo. [doi]
• Cryogenic InGaAs HEMTs for LNA and Routing Circuits in Quantum ComputingSangHyeon Kim. [doi]
• Memristor Based Mixed-Precision Computation-in-Memory SystemBin Gao 0006. [doi]
• Hafnia-based Ferroelectric Memory: Device Physics Strongly Correlated with Materials ChemistryMin Hyuk Park. [doi]
• Embracing the new era of AI at the edgeVincent Huard. [doi]
• BEOL-compatible Oxide Semiconductor DevicesKaizhen Han. [doi]
• Domain-specific computing with non-volatile multi-terminal devicesXuanyao Fong. [doi]
• Low-power MEMS-based CMOS TransceiversKai Tang. [doi]
• GaN Power Device Technology and monolithic integrated GaN power systemsWen Liu. [doi]
• Investigation of Low Temperature Noise and Current Fluctuation for Advanced Transistors: Characterization and ModelingRan Cheng. [doi]
• Multi-Functionalities and Applications of Dual-Port Ferroelectric FETKai Ni. [doi]
• Beyond Integer Quantization: Approximate Arithmetic for Machine Learning AcceleratorsJames Tandon. [doi]
• Memristor Based Mixed-Accuracy Computation-in-Memory SystemZe Wang, Ruihua Yu, Bin Gao 0006. 1-5 [doi]
• Beyond Integer Quantization: Approximate Arithmetic for Machine Learning Accelerators : (Invited Paper)James S. Tandon. 6-9 [doi]
• Challenges in Generating True Random Numbers Considering the Variety of Corners, Aging, and Intentional AttacksJavad Bahrami, Jean-Luc Danger, Mohammad Ebrahimabadi, Sylvain Guilley, Naghmeh Karimi. 10-15 [doi]
• Development of Neuromorphic Locomotion Generator with Switching Gait by Light Stimulation for MicrorobotsKosei Sekiyama, Isuke Okuma, Wataru Nakayama, Lyu Shuxin, Katsuyuki Morishita, Ken Saito. 16-19 [doi]
• A Design of BNN Accelerator using Gate-level Pipelined Self-Synchronous CircuitAmartuvshin Bayasgalan, Makoto Ikeda. 20-24 [doi]
• Reservoir Computing Utilizing Ferroelectric-Gate-Insulator FETs and CapacitorsShinichi Takagi, Kasidit Toprasertpong, Eishin Nako, Zeyu Wang, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane. 25-28 [doi]
• First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate MemoryZijie Zheng, Jiawei Xie, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong. 29-33 [doi]
• Insight into Effects of Introducing Ag-In-Zn-S Quantum Dots on Switching Characteristics of TiO2-Based MemristorNan He, Haiming Qin, Feng Xu 0009, Hao Zhang, Yang Sheng, Yi Tong. 34-36 [doi]
• Realization of Artificial Neuron with Firing Saturation Based on Single Memristive DeviceYu Wang, Yanzhong Zhang, Yanji Wang, Xinyue An, Miaocheng Zhang, Xinpeng Wang, Hao Zhang, Rongqing Xu, Yi Tong. 37-40 [doi]
• Millimeter-Wave Dual-Frequency Transformer-based RectifierYun Fang, Hao Gao 0001. 41-43 [doi]
• Low-power MEMS-based CMOS TransceiversKai Tang 0002, Ting Guo, Xiaolin Sun, Chun Zhao, Hao Gao, Yuanjin Zheng. 44-47 [doi]
• A 60-GHz Transformer-Based Power Amplifier Supporting 5G n263-band ApplicationsJunqing Liu, Zheng Li, Minghao Fan, Yilun Chen, Atsushi Shirane, Kenichi Okada. 48-51 [doi]
• Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level ShiftersJunzhe Tan, Dongyi Yang, Shiqiang Wu, Yuhao Zhu, Yaoyao Pan, Pengju Cui, Wen Liu. 52-56 [doi]
• A Monolithic Gallium Nitride Driver with Zero-Voltage-Switching and Dead Time ControlPingyu Cao, Yihua Wu, Yinchao Zhao, Miao Cui. 57-60 [doi]
• 39 - 67 GHz CMOS Multistage Power Amplifier With Two-Way Power StageSho Okii, Shinsuke Hara, Akifumi Kasamatsu, Yohtaro Umeda, Kyoya Takano. 61-63 [doi]
• A High Resolution And Wide Range Temperature Detector Using 180-nm CMOS ProcessRalph Gerard B. Sangalang, Shih-Heng Luo, Chua-Chin Wang. 64-67 [doi]
• Frequency Dependency of Soft Error Rates Based on Dynamic Soft Error MeasurementsHaruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi. 68-71 [doi]
• SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle IrradiationKeita Yoshida, Ryuichi Nakajima, Shotaro Sugitani, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi. 72-75 [doi]
• Dynamic Circuit Characterization and a Single Ring-Oscillator-Based Test Structure for Its Timing Parameter ExtractionHaoming Zhang, Shuowei Li, Tetsuya Iizuka. 76-79 [doi]
• Anomalous Wafer Map Detection and Localization using Unsupervised LearningLin Zhao, Chai Kiat Yeo. 80-83 [doi]
• 2 Nb/AlOx/Nb Planarization ProcessMasamitsu Tanaka, Yoshihiro Kitagawa, Tetsuro Satoh, Tsuyoshi Yamamoto. 84-87 [doi]
• A 1-5GHz Inverter-Based Phase Interpolator with All Digital Control for Spin-Wave Detection CircuitYuyang Zhu, Zunsong Yang, Zhenyu Cheng, Md Shamim Sarker, Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata, Tetsuya Iizuka. 88-91 [doi]
• Design of 1-5 GHz Two-Stage Noise-Canceling Low-Noise Amplifier with gm-boosting Technique for Spin Wave Detection CircuitZhenyu Cheng, Zunsong Yang, Yuyang Zhu, Md Shamim Sarker, Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata, Tetsuya Iizuka. 92-95 [doi]
• Template-based design optimization for multiple pairing-friendly curve parametersMomoko Fukuda, Makoto Ikeda. 96-99 [doi]
• High-Throughput Key Switching Accelerator for Homomorphic EncryptionZeyu Wang, Makoto Ikeda. 100-103 [doi]
• Versatile Resource-shared Cryptographic Accelerator for Multi-Domain ApplicationsVu Trung Duong Le, Hoai Luan Pham, Thi Hong Tran, Quoc Duy Nam Nguyen, Thi Sang Duong, Yasuhiko Nakashima. 104-107 [doi]
• SibProMQTT: Protection of the MQTT Communication Protocol Against Sybil Attacks Applied for IoT DevicesFavian Dewantaz, Ida Wahidah, Sofia Naning Hertiana, Danu Dwi Sanjoyo, Sharifah Hafizah Syed Ariffin. 108-111 [doi]
• Assessing the Vulnerability of Time-Controlled Logic-Loop-Based Circuits to Voltage Fault Injection and Power Monitoring AttacksZiyang Ye, Makoto Ikeda. 112-115 [doi]
• Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier StressXinze Li, Yuxuan Wu, Qiao Teng, Ying Sun, Xiao Gong, Guillaume Besnard, Christophe Maleville, Olivier Weber, Rui Zhang, Bing Chen, Dawei Gao, Ran Cheng. 116-119 [doi]
• Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency NoiseYi Jiang, Yanning Chen, Fang Liu, Bo Wu, Yongfeng Deng, Junkang Li, Dawei Gao, Rui Zhang. 120-123 [doi]
• The Performance of FRAM Integrated With 3D Trench Hf0.5Zr0.5O2 Ferroelectric CapacitorJianjun Li, Tao Du, Wei Li. 124-126 [doi]
• Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect TransistorsJiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han. 127-130 [doi]
• Strategy for Improving Cycle of Maximized Energy Output of Triboelectric NanogeneratorsYirui Su, Masao Yanagisawa, Youhua Shi. 131-135 [doi]
• Thin-film Transistor-based Tribotronic Artificial Synapse with Neurosensory BehaviorH. Lei, Yixin Cao 0004, Chun Zhao. 136-140 [doi]
• Impact of Programming Process on Temperature Coefficient in Analog RRAMSiyao Yang, Bin Gao 0006, Jianshi Tang, Feng Xu, Peng Yao, He Qian, Huaqiang Wu. 141-144 [doi]
• A study of scattering structures for high sensitive near-infrared pixelsGodeun Seok, Yunkyung Kim. 145-147 [doi]
• The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD SimulationXuan Chi, Yubo Wang, Fan Li, Yixiao Huang, Chenruiyuan Yu, Shiqiang Wu, Huiqing Wen, Jiangmin Gu, Ping Zhang, Wen Liu. 148-151 [doi]
• The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTsShiqiang Wu, Fan Li, Yuhao Zhu, Yixiao Huang, Chenruiyuan Yu, Yubo Wang, Xuan Chi, Huiqing Wen, Wen Liu. 152-155 [doi]
• Physics-Based Small-Signal Model of Ga2O3 Hot-Electron TransistorRoupu Zhu, Chengwei Liu, Yuhao Zhu, Wen Liu, Yi Pei, Man Hoi Wong. 156-158 [doi]
• Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETsJing Yan, Junkang Li, Rui Zhang. 159-162 [doi]