Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress

Xinze Li, Yuxuan Wu, Qiao Teng, Ying Sun, Xiao Gong, Guillaume Besnard, Christophe Maleville, Olivier Weber, Rui Zhang, Bing Chen, Dawei Gao, Ran Cheng. Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 116-119, IEEE, 2023. [doi]

Abstract

Abstract is missing.