Xinze Li, Yuxuan Wu, Qiao Teng, Ying Sun, Xiao Gong, Guillaume Besnard, Christophe Maleville, Olivier Weber, Rui Zhang, Bing Chen, Dawei Gao, Ran Cheng. Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 116-119, IEEE, 2023. [doi]
@inproceedings{LiWTSGBMWZCGC23,
title = {Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress},
author = {Xinze Li and Yuxuan Wu and Qiao Teng and Ying Sun and Xiao Gong and Guillaume Besnard and Christophe Maleville and Olivier Weber and Rui Zhang and Bing Chen and Dawei Gao and Ran Cheng},
year = {2023},
doi = {10.1109/ICICDT59917.2023.10332402},
url = {https://doi.org/10.1109/ICICDT59917.2023.10332402},
researchr = {https://researchr.org/publication/LiWTSGBMWZCGC23},
cites = {0},
citedby = {0},
pages = {116-119},
booktitle = {International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023},
publisher = {IEEE},
isbn = {979-8-3503-1931-6},
}