Jing Yan, Junkang Li, Rui Zhang. Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 159-162, IEEE, 2023. [doi]
Abstract is missing.