Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs - researchr publication authors

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Jing Yan, Junkang Li, Rui Zhang. Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 159-162, IEEE, 2023. [doi]

This author has not been identified. Look up 'Jing Yan' in GoogleThis author has not been identified. Look up 'Junkang Li' in GoogleThis author has not been identified. Look up 'Rui Zhang' in Google

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