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First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory

Zijie Zheng, Jiawei Xie, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong. First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 29-33, IEEE, 2023. [doi]

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