First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Zijie Zheng, Jiawei Xie, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong. First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. In International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023. pages 29-33, IEEE, 2023. [doi]

This author has not been identified. Look up 'Zijie Zheng' in GoogleThis author has not been identified. Look up 'Jiawei Xie' in GoogleThis author has not been identified. Look up 'Yiyuan Sun' in GoogleThis author has not been identified. Look up 'Ying Xu' in GoogleThis author has not been identified. Look up 'Xiaolin Wang' in GoogleThis author has not been identified. Look up 'Leming Jiao' in GoogleThis author has not been identified. Look up 'Zuopu Zhou' in GoogleThis author has not been identified. Look up 'Qiwen Kong' in GoogleThis author has not been identified. Look up 'Yue Chen' in GoogleThis author has not been identified. Look up 'Xiao Gong' in Google

runs on WebDSL