ESD reliability building in 0.25 μm 60-V p-channel LDMOS DUTs with different embedded SCRs

Shen-Li Chen, Yu-Ting Huang, Shawn Chang, Shun-Bao Chang. ESD reliability building in 0.25 μm 60-V p-channel LDMOS DUTs with different embedded SCRs. In IEEE International Conference on Consumer Electronics - Taiwan, ICCE-TW 2015, Taipei, Taiwan, June 6-8, 2015. pages 268-269, IEEE, 2015. [doi]

Abstract

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