ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions

Shen-Li Chen, Yu-Ting Huang, Chih-Ying Yen, Kuei-Jyun Chen, Yi-Cih Wu, Jia-Ming Lin, Chih-Hung Yang. ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions. In IEEE 5th Global Conference on Consumer Electronics, GCCE 2016, Kyoto, Japan, October 11-14, 2016. pages 1-2, IEEE, 2016. [doi]

@inproceedings{ChenHYCWLY16,
  title = {ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions},
  author = {Shen-Li Chen and Yu-Ting Huang and Chih-Ying Yen and Kuei-Jyun Chen and Yi-Cih Wu and Jia-Ming Lin and Chih-Hung Yang},
  year = {2016},
  doi = {10.1109/GCCE.2016.7800464},
  url = {https://doi.org/10.1109/GCCE.2016.7800464},
  researchr = {https://researchr.org/publication/ChenHYCWLY16},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {IEEE 5th Global Conference on Consumer Electronics, GCCE 2016, Kyoto, Japan, October 11-14, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-2333-2},
}