Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-µm CMOS technology

Shih-Hung Chen, Ming-Dou Ker. Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-µm CMOS technology. Microelectronics Reliability, 50(6):821-830, 2010. [doi]

Abstract

Abstract is missing.