Xiaoqing Chen, Feng Li, Herbert Hess. Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate. IEEE Access, 12:42791-42801, 2024. [doi]
@article{ChenLH24a,
title = {Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate},
author = {Xiaoqing Chen and Feng Li and Herbert Hess},
year = {2024},
doi = {10.1109/ACCESS.2024.3377563},
url = {https://doi.org/10.1109/ACCESS.2024.3377563},
researchr = {https://researchr.org/publication/ChenLH24a},
cites = {0},
citedby = {0},
journal = {IEEE Access},
volume = {12},
pages = {42791-42801},
}