Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate

Xiaoqing Chen, Feng Li, Herbert Hess. Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate. IEEE Access, 12:42791-42801, 2024. [doi]

Abstract

Abstract is missing.