CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies

Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marco Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi. CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-7, IEEE, 2019. [doi]

@inproceedings{ChenLHSKCMMMH19,
  title = {CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies},
  author = {Shih-Hung Chen and Dimitri Linten and Geert Hellings and Marco Simicic and Ben Kaczer and Thomas Chiarella and Hans Mertens and Jérôme Mitard and Anda Mocuta and N. Horiguchi},
  year = {2019},
  doi = {10.1109/IRPS.2019.8720432},
  url = {https://doi.org/10.1109/IRPS.2019.8720432},
  researchr = {https://researchr.org/publication/ChenLHSKCMMMH19},
  cites = {0},
  citedby = {0},
  pages = {1-7},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
  publisher = {IEEE},
  isbn = {978-1-5386-9504-3},
}