Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM - researchr publication authors

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Yiran Chen, Hai Li, XiaoBin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang. Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM. In Vojin G. Oklobdzija, Barry Pangle, Naehyuck Chang, Naresh R. Shanbhag, Chris H. Kim, editors, Proceedings of the 2010 International Symposium on Low Power Electronics and Design, 2010, Austin, Texas, USA, August 18-20, 2010. pages 1-6, ACM, 2010. [doi]

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