3D-HIM: A 3D High-density Interleaved Memory for bipolar RRAM design

Yi-Chung Chen, Hai Li, Wei Zhang, Robinson E. Pino. 3D-HIM: A 3D High-density Interleaved Memory for bipolar RRAM design. In Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011, San Diego, CA, USA, June 8-9, 2011. pages 59-64, IEEE Computer Society, 2011. [doi]

@inproceedings{ChenLZP11,
  title = {3D-HIM: A 3D High-density Interleaved Memory for bipolar RRAM design},
  author = {Yi-Chung Chen and Hai Li and Wei Zhang and Robinson E. Pino},
  year = {2011},
  url = {http://dl.acm.org/citation.cfm?id=2052106},
  researchr = {https://researchr.org/publication/ChenLZP11},
  cites = {0},
  citedby = {0},
  pages = {59-64},
  booktitle = {Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011, San Diego, CA, USA, June 8-9, 2011},
  publisher = {IEEE Computer Society},
  isbn = {978-1-4577-0993-7},
}