A 69.5 mW 20 GS/s 6b Time-Interleaved ADC With Embedded Time-to-Digital Calibration in 32 nm CMOS SOI

Vanessa H.-C. Chen, Lawrence T. Pileggi. A 69.5 mW 20 GS/s 6b Time-Interleaved ADC With Embedded Time-to-Digital Calibration in 32 nm CMOS SOI. J. Solid-State Circuits, 49(12):2891-2901, 2014. [doi]

@article{ChenP14-11,
  title = {A 69.5 mW 20 GS/s 6b Time-Interleaved ADC With Embedded Time-to-Digital Calibration in 32 nm CMOS SOI},
  author = {Vanessa H.-C. Chen and Lawrence T. Pileggi},
  year = {2014},
  doi = {10.1109/JSSC.2014.2364043},
  url = {http://dx.doi.org/10.1109/JSSC.2014.2364043},
  researchr = {https://researchr.org/publication/ChenP14-11},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {49},
  number = {12},
  pages = {2891-2901},
}