Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performance

Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen. Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performance. In IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, Brooklyn, NY, USA, July 15-17, 2013. pages 82-88, IEEE, 2013. [doi]

Abstract

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