A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu. A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS. IEICE Trans. Electron., 103-C(4):153-160, 2020. [doi]

Abstract

Abstract is missing.