Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors - researchr publication

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Zehua Chen, Hei Wong, Yan Han, Shurong Dong, B. L. Yang. Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors. Microelectronics Reliability, 54(6-7):1109-1114, 2014. [doi]

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