Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer - researchr publication authors

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Yi-Shao Chen, Zongwei Wang, Zhihong Zhang, Li Wang, Yichen Fang, Jen-Chung Lou, Kaihui Liu, Jintong Xu, YiMao Cai, Ru Huang. Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. In Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018. pages 1-3, IEEE, 2018. [doi]

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