Yi-Shao Chen, Zongwei Wang, Zhihong Zhang, Li Wang, Yichen Fang, Jen-Chung Lou, Kaihui Liu, Jintong Xu, YiMao Cai, Ru Huang. Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. In Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018. pages 1-3, IEEE, 2018. [doi]
@inproceedings{ChenWZWFLLXCH18,
title = {Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer},
author = {Yi-Shao Chen and Zongwei Wang and Zhihong Zhang and Li Wang and Yichen Fang and Jen-Chung Lou and Kaihui Liu and Jintong Xu and YiMao Cai and Ru Huang},
year = {2018},
doi = {10.1109/NVMTS.2018.8603102},
url = {https://doi.org/10.1109/NVMTS.2018.8603102},
researchr = {https://researchr.org/publication/ChenWZWFLLXCH18},
cites = {0},
citedby = {0},
pages = {1-3},
booktitle = {Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018},
publisher = {IEEE},
isbn = {978-1-5386-7783-4},
}