Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Shiou-Ying Cheng. Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). Microelectronics Reliability, 47(8):1208-1212, 2007. [doi]

Abstract

Abstract is missing.