NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN

Wei-Chun Cheng, Shuo-Han Chen, Yuan-Hao Chang, Kuan-Hsun Chen, Jian-Jia Chen, Tseng-Yi Chen, Ming-Chang Yang, Wei Kuan Shih. NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN. In 9th Non-Volatile Memory Systems and Applications Symposium, NVMSA 2020, Seoul, South Korea, August 19-21, 2020. pages 1-6, IEEE, 2020. [doi]

Abstract

Abstract is missing.