Yingda Cheng, Irene M. Gamba, Kui Ren. Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model. J. Comput. Physics, 230(9):3391-3412, 2011. [doi]
@article{ChengGR11,
title = {Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model},
author = {Yingda Cheng and Irene M. Gamba and Kui Ren},
year = {2011},
doi = {10.1016/j.jcp.2011.01.034},
url = {http://dx.doi.org/10.1016/j.jcp.2011.01.034},
researchr = {https://researchr.org/publication/ChengGR11},
cites = {0},
citedby = {0},
journal = {J. Comput. Physics},
volume = {230},
number = {9},
pages = {3391-3412},
}