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Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions

J. J. Cheng, P. Li, W. Z. Chen, B. Yi, X. B. Chen. Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions. In Karolj Skala, Marko Koricic, Tihana Galinac Grbac, Marina Cicin-Sain, Vlado Sruk, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Matej Janjic, editors, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018, Opatija, Croatia, May 21-25, 2018. pages 54-59, IEEE, 2018. [doi]

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J. J. Cheng

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P. Li

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W. Z. Chen

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B. Yi

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X. B. Chen

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