J. J. Cheng, P. Li, W. Z. Chen, B. Yi, X. B. Chen. Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions. In Karolj Skala, Marko Koricic, Tihana Galinac Grbac, Marina Cicin-Sain, Vlado Sruk, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Matej Janjic, editors, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018, Opatija, Croatia, May 21-25, 2018. pages 54-59, IEEE, 2018. [doi]
@inproceedings{ChengLCYC18,
title = {Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions},
author = {J. J. Cheng and P. Li and W. Z. Chen and B. Yi and X. B. Chen},
year = {2018},
doi = {10.23919/MIPRO.2018.8400011},
url = {https://doi.org/10.23919/MIPRO.2018.8400011},
researchr = {https://researchr.org/publication/ChengLCYC18},
cites = {0},
citedby = {0},
pages = {54-59},
booktitle = {41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018, Opatija, Croatia, May 21-25, 2018},
editor = {Karolj Skala and Marko Koricic and Tihana Galinac Grbac and Marina Cicin-Sain and Vlado Sruk and Slobodan Ribaric and Stjepan Gros and Boris Vrdoljak and Mladen Mauher and Edvard Tijan and Predrag Pale and Matej Janjic},
publisher = {IEEE},
isbn = {978-953-233-095-3},
}