Non-tunneling origin of the 1/f noise in SiC MOSFET

Kin P. Cheung, Jason P. Campbell. Non-tunneling origin of the 1/f noise in SiC MOSFET. In 2018 International Conference on IC Design & Technology, ICICDT 2018, Otranto, Italy, June 4-6, 2018. pages 165-168, IEEE, 2018. [doi]

Abstract

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