Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl. Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectronics Reliability, 54(9-10):2191-2195, 2014. [doi]
@article{ChevtchenkoSBJF14,
title = {Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors},
author = {Sergey A. Chevtchenko and Matthias Schulz and Eldad Bahat-Treidel and Wilfred John and Stephan Freyer and Paul Kurpas and Joachim Würfl},
year = {2014},
doi = {10.1016/j.microrel.2014.07.046},
url = {http://dx.doi.org/10.1016/j.microrel.2014.07.046},
researchr = {https://researchr.org/publication/ChevtchenkoSBJF14},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {54},
number = {9-10},
pages = {2191-2195},
}