Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl. Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectronics Reliability, 54(9-10):2191-2195, 2014. [doi]
Abstract is missing.