A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's

Te-Kuang Chiang. A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. Microelectronics Reliability, 49(2):113-119, 2009. [doi]

Authors

Te-Kuang Chiang

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