A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's

Te-Kuang Chiang. A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's. Microelectronics Reliability, 49(2):113-119, 2009. [doi]

@article{Chiang09-4,
  title = {A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's},
  author = {Te-Kuang Chiang},
  year = {2009},
  doi = {10.1016/j.microrel.2008.11.005},
  url = {http://dx.doi.org/10.1016/j.microrel.2008.11.005},
  researchr = {https://researchr.org/publication/Chiang09-4},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {49},
  number = {2},
  pages = {113-119},
}