TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond

Cheng Pu Chiu, Yen-Chun Liu, Bin-Siang Tsai, Yi-Jing Wang, Yeh-Sheng Lin, Yun-Ru Chen, Chien-Lin Weng, Sheng-Yuan Hsueh, Jack Hung, Ho-Yu Lai, Jei-Ming Chen, Albert H.-B. Cheng, Chien-Chung Huang. TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]

Abstract

Abstract is missing.