SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling

Keonhee Cho, Heekyung Choi, In Jun Jung, Ji Sang Oh, Tae-Woo Oh, Ki-Ryong Kim, Giseok Kim, Taemin Choi, Changsu Sim, Taejoong Song, Seong-Ook Jung. SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling. J. Solid-State Circuits, 57(4):1039-1048, 2022. [doi]

@article{ChoCJOOKKCSSJ22,
  title = {SRAM Write- and Performance-Assist Cells for Reducing Interconnect Resistance Effects Increased With Technology Scaling},
  author = {Keonhee Cho and Heekyung Choi and In Jun Jung and Ji Sang Oh and Tae-Woo Oh and Ki-Ryong Kim and Giseok Kim and Taemin Choi and Changsu Sim and Taejoong Song and Seong-Ook Jung},
  year = {2022},
  doi = {10.1109/JSSC.2021.3138785},
  url = {https://doi.org/10.1109/JSSC.2021.3138785},
  researchr = {https://researchr.org/publication/ChoCJOOKKCSSJ22},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {57},
  number = {4},
  pages = {1039-1048},
}