Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Nam, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jae-Hyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Sung-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junyoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichan Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyowon Jin. A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density. In IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022. pages 134-135, IEEE, 2022. [doi]
@inproceedings{ChoJKNLNKLCKLCJ22,
title = {A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density},
author = {Wanik Cho and Jongseok Jung and Jongwoo Kim and Junghoon Nam and Sangkyu Lee and Yujong Noh and Dauni Kim and Wanseob Lee and Kayoung Cho and Kwanho Kim and Heejoo Lee and Sooyeol Chai and Eunwoo Jo and Hanna Cho and Jong-Seok Kim and Chankeun Kwon and Cheolioona Park and Hveonsu Nam and Haeun Won and Taeho Kim and Kyeonghwan Park and Sanghoon Oh and Jinhyun Ban and Junyoung Park and Jae-Hyeon Shin and Taisik Shin and Junseo Jang and Jiseong Mun and Jehyun Choi and Hyunseung Choi and Sung-Wook Choi and Wonsun Park and Dongkvu Yoon and Minsu Kim and Junyoun Lim and Chiwook An and Hyunyoung Shirr and Haesoon Oh and Haechan Park and Sungbo Shim and Hwang Huh and Honasok Choi and Seungpil Lee and Jaesuna Sim and Kichan Gwon and Jumsoo Kim and Woopyo Jeong and Jungdal Choi and Kyowon Jin},
year = {2022},
doi = {10.1109/ISSCC42614.2022.9731785},
url = {https://doi.org/10.1109/ISSCC42614.2022.9731785},
researchr = {https://researchr.org/publication/ChoJKNLNKLCKLCJ22},
cites = {0},
citedby = {0},
pages = {134-135},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022},
publisher = {IEEE},
isbn = {978-1-6654-2800-2},
}