Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices - researchr publication authors

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Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hoon Lee, Jong-Pil Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park. Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices. IEICE Transactions, 90-C(5):988-993, 2007. [doi]

This author has not been identified. Look up 'Seongjae Cho' in GoogleThis author has not been identified. Look up 'Jang-Gn Yun' in GoogleThis author has not been identified. Look up 'Il Han Park' in GoogleThis author has not been identified. Look up 'Jung Hoon Lee' in GoogleThis author has not been identified. Look up 'Jong-Pil Kim' in GoogleThis author has not been identified. Look up 'Jong Duk Lee' in GoogleThis author has not been identified. Look up 'Hyungcheol Shin' in GoogleThis author has not been identified. Look up 'Byung-Gook Park' in Google

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