IkJoon Choi, Seunghwan Hong, Kihyun Kim, Jeongsik Hwang, Seunghan Woo, Young Sang Kim, Cheongryong Cho, Eun-Young Lee, Hun-Jae Lee, Min-su Jung, Hee-Yun Jung, Ju-Seong Hwang, Junsub Yoon, Wonmook Lim, Hyeong-Jin Yoo, Won Ki Lee, Jung-Kyun Oh, Dong Su Lee, Jong-eun Lee, Jun-Hyung Kim, Young Kwan Kim, Su-Jin Park, Byung-Kyu Ho, Byongwook Na, Hye-In Choi, Chung Ki Lee, Soo Jung Lee, Hyunsung Shin, Young Kyu Lee, Jang-Woo Ryu, Sangwoong Shin, Sungchul Park, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Tae-young Oh, Sangjoon Hwang. th-Generation 10nm DRAM Process. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 234-236, IEEE, 2024. [doi]
@inproceedings{ChoiHKHWKCLLJJHYLYLOLLKKPHNCLLSLRSPLB24,
title = {th-Generation 10nm DRAM Process},
author = {IkJoon Choi and Seunghwan Hong and Kihyun Kim and Jeongsik Hwang and Seunghan Woo and Young Sang Kim and Cheongryong Cho and Eun-Young Lee and Hun-Jae Lee and Min-su Jung and Hee-Yun Jung and Ju-Seong Hwang and Junsub Yoon and Wonmook Lim and Hyeong-Jin Yoo and Won Ki Lee and Jung-Kyun Oh and Dong Su Lee and Jong-eun Lee and Jun-Hyung Kim and Young Kwan Kim and Su-Jin Park and Byung-Kyu Ho and Byongwook Na and Hye-In Choi and Chung Ki Lee and Soo Jung Lee and Hyunsung Shin and Young Kyu Lee and Jang-Woo Ryu and Sangwoong Shin and Sungchul Park and Daihyun Lim and Seung-Jun Bae and Young-Soo Sohn and Tae-young Oh and Sangjoon Hwang},
year = {2024},
doi = {10.1109/ISSCC49657.2024.10454327},
url = {https://doi.org/10.1109/ISSCC49657.2024.10454327},
researchr = {https://researchr.org/publication/ChoiHKHWKCLLJJHYLYLOLLKKPHNCLLSLRSPLB24},
cites = {0},
citedby = {0},
pages = {234-236},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024},
publisher = {IEEE},
isbn = {979-8-3503-0620-0},
}