2 64Gb MLC NAND-flash memory with 16nm CMOS technology

Sungdae Choi, DuckJu Kim, Sungwook Choi, Byungryul Kim, Sunghyun Jung, Kichang Chun, Namkyeong Kim, Wanseob Lee, Taisik Shin, Hyunjong Jin, Hyunchul Cho, Sunghoon Ahn, Yonghwan Hong, Ingon Yang, Byoungyoung Kim, Pil-Seon Yoo, Youngdon Jung, Jinwoo Lee, Jae-Hyeon Shin, Taeyun Kim, Kunwoo Park, Jinwoong Kim. 2 64Gb MLC NAND-flash memory with 16nm CMOS technology. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 328-329, IEEE, 2014. [doi]

Abstract

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