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Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor

Seok Gyu Choi, Jung Hun Oh, Bok-Hyung Lee, Byeong Ok Lim, Sung Woon Moon, Dong-Hoon Shin, Sam-Dong Kim, Jin Koo Rhee. Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor. IEICE Transactions, 89-C(5):616-621, 2006. [doi]

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