Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs - researchr publication authors

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Y. C. Chou, D. Leung, R. Grundbacher, R. Lai, Q. Kan, P. H. Liu, D. Eng, T. Block, A. Oki. Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. Microelectronics Reliability, 46(1):24-40, 2006. [doi]

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