Y. C. Chou, D. Leung, R. Grundbacher, R. Lai, Q. Kan, P. H. Liu, D. Eng, T. Block, A. Oki. Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. Microelectronics Reliability, 46(1):24-40, 2006. [doi]
@article{ChouLGLKLEBO06,
title = {Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs},
author = {Y. C. Chou and D. Leung and R. Grundbacher and R. Lai and Q. Kan and P. H. Liu and D. Eng and T. Block and A. Oki},
year = {2006},
doi = {10.1016/j.microrel.2005.02.012},
url = {http://dx.doi.org/10.1016/j.microrel.2005.02.012},
tags = {C++},
researchr = {https://researchr.org/publication/ChouLGLKLEBO06},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {46},
number = {1},
pages = {24-40},
}