A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET

Nadim Chowdhury, Zubair Al Azim, Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam, Quazi Deen Mohd Khosru. A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET. In 2012 IEEE International Conference on Electro/Information Technology, Indianapolis, IN, USA, May 6-8, 2012. pages 1-4, IEEE, 2012. [doi]

Abstract

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