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Temperature dependent time-to-breakdown (T::BD::) of TiN/HfO::2:: n-channel MOS devices in inversion

N. A. Chowdhury, X. Wang, G. Bersuker, C. Young, N. Rahim, D. Misra. Temperature dependent time-to-breakdown (T::BD::) of TiN/HfO::2:: n-channel MOS devices in inversion. Microelectronics Reliability, 49(5):495-498, 2009. [doi]

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N. A. Chowdhury

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X. Wang

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G. Bersuker

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C. Young

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N. Rahim

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D. Misra

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