C. Chung, D. Kobayashi, K. Hirose. Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 4, IEEE, 2018. [doi]
@inproceedings{ChungKH18,
title = {Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation},
author = {C. Chung and D. Kobayashi and K. Hirose},
year = {2018},
doi = {10.1109/IRPS.2018.8353585},
url = {https://doi.org/10.1109/IRPS.2018.8353585},
researchr = {https://researchr.org/publication/ChungKH18},
cites = {0},
citedby = {0},
pages = {4},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}