R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis. Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectronics Reliability, 41(7):1027-1030, 2001. [doi]
@article{ClercSGLP01,
title = {Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)},
author = {R. Clerc and A. S. Spinelli and G. Ghibaudo and C. Leroux and G. Pananakakis},
year = {2001},
doi = {10.1016/S0026-2714(01)00063-4},
url = {http://dx.doi.org/10.1016/S0026-2714(01)00063-4},
tags = {modeling, C++},
researchr = {https://researchr.org/publication/ClercSGLP01},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {41},
number = {7},
pages = {1027-1030},
}