Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories

Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement. Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories. Microelectronics Reliability, 88:61-66, 2018. [doi]

Abstract

Abstract is missing.