Design and characteristics of n-channel insulated-gate field-effect transistors

D. L. Critchlow, Robert H. Dennard, Stanley Schuster. Design and characteristics of n-channel insulated-gate field-effect transistors. IBM Journal of Research and Development, 44(1):70-83, 2000. [doi]

Authors

D. L. Critchlow

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Robert H. Dennard

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Stanley Schuster

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