Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling - researchr publication authors

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Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jerome Mitard, Liesbeth Witters, Thomas Y. Hoffmann. Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. In International Symposium on Circuits and Systems (ISCAS 2011), May 15-19 2011, Rio de Janeiro, Brazil. pages 2249-2252, IEEE, 2011. [doi]

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Massimo Alioto

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