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The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters

Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Talyor, Paul R. Chalker, Cezhou Zhao. The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]

Authors

Miao Cui

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Yutao Cai

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Qinglei Bu

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Wen Liu

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Huiqing Wen

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Ivona Z. Mitrovic

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Stephen Talyor

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Paul R. Chalker

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Cezhou Zhao

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